Effect of CH4/H2 plasma ratio on ultra-low friction of nano-crystalline diamond coating deposited by MPECVD technique

Nano-crystalline diamond coatings were deposited on the silicon substrate using Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD). Experiments were performed by varying the H2 content in CH4/H2 plasma during synthesis. Raman spectral analysis revealed that with decrease in hydrogen content in the CH4 plasma, the ID/IG ratio decreases with the formation of smaller crystallites. Such a film possesses a large grain boundary fraction containing hydrogenated amorphous carbon (a-C:H). During tribological test, sufficient amount of hydrogen present in the grain boundary passivates the dangling σ-bond causing ultra-low friction and extremely low wear evident by improvement in microstructure.

► Nano-crystalline diamond coatings synthesized by MPECVD technique.
► Tribological properties of nano-crystalline diamond coatings.
► Passivation of dangling σ-bond causing ultra-low friction.