کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
616243 | 881481 | 2009 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A DOE nano-tribological study of thin amorphous carbon-based films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A DOE nano-tribological study of thin amorphous carbon-based films A DOE nano-tribological study of thin amorphous carbon-based films](/preview/png/616243.png)
چکیده انگلیسی
A design of experiment (DOE) matrix of 150Â nm non-hydrogenated amorphous C and Cr doped amorphous C films was produced to investigate the effect of four key coating process parameters (use of an adhesion layer, Cr magnetron current, cathodic substrate bias voltage and Ar flow to the chamber) using a new rapid method of nano-scale wear test under conditions relevant to MEMS and similar devices. The condition of nano-wear was produced by controlled oscillation of the sample mounting within a nanoindentation system under ultra-low normal load. Specific wear rates were low, typically in the range 6-24Ã10â17Â m3Â Nâ1Â mâ1. The results were processed using an analysis of variance (ANOVA) procedure which showed that: hardness was reduced in the Cr containing films whilst specific wear rate and data scatter increased, increasing the cathodic substrate bias voltage reduced the specific wear rate due to increased coating hardness, the use of a Cr adhesion layer reduced the specific wear rate and scatter of results with Cr doped films but had no effect on pure a-C films, and Ar flow rate had no significant effect on specific wear rate but strongly interacted with the effect of the cathodic bias voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Tribology International - Volume 42, Issue 2, February 2009, Pages 220-228
Journal: Tribology International - Volume 42, Issue 2, February 2009, Pages 220-228
نویسندگان
G.M. Wilson, J.F. Smith, J.L. Sullivan,