کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6326419 | 1619755 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ treatment of arsenic contaminated groundwater by aquifer iron coating: Experimental study
ترجمه فارسی عنوان
درمان موضعی آلودگی آب زیرزمینی آرسنیک به وسیله پوشش آکیفیر آهن: مطالعه تجربی
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کلمات کلیدی
آب های زیرزمینی، آلودگی آرسنیک، پوشش آهن، جاذبه در محل،
موضوعات مرتبط
علوم زیستی و بیوفناوری
علوم محیط زیست
شیمی زیست محیطی
چکیده انگلیسی
Aquifer iron coating method was developed via a 4-step alternating injection of oxidant, iron salt and oxygen-free water. A continuous injection of 5.0Â mmol/L FeSO4 and 2.5Â mmol/L NaClO for 96Â h can form a uniform goethite coating on the surface of quartz sand without causing clogging. At a flow rate of 7.2Â mL/min of the injection reagents, arsenic (as Na2HAsO4) and tracer fluorescein sodium to pass through the iron-coated quartz sand column were approximately at 126 and 7 column pore volumes, respectively. The retardation factor of arsenic was 23.0, and the adsorption capacity was 0.11Â mol As per mol Fe. In situ arsenic removal from groundwater in an aquifer was achieved by simultaneous injections of As(V) and Fe(II) reagents. Arsenic fixation resulted from a process of adsorption/co-precipitation with fine goethite particles by way of bidentate binuclear complexes. Therefore, the study results indicate that the high arsenic removal efficiency of the in situ aquifer iron coating technology likely resulted from the expanded specific surface area of the small goethite particles, which enhanced arsenic sorption capability and/or from co-precipitation of arsenic on the surface of goethite particles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science of The Total Environment - Volumes 527â528, 15 September 2015, Pages 38-46
Journal: Science of The Total Environment - Volumes 527â528, 15 September 2015, Pages 38-46
نویسندگان
Xianjun Xie, Yanxin Wang, Kunfu Pi, Chongxuan Liu, Junxia Li, Yaqing Liu, Zhiqiang Wang, Mengyu Duan,