کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
648478 884624 2009 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Steps towards the development of an experimentally verified simulation of pool nucleate boiling on a silicon wafer with artificial sites
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
Steps towards the development of an experimentally verified simulation of pool nucleate boiling on a silicon wafer with artificial sites
چکیده انگلیسی

Nucleate boiling is a very effective heat transfer cooling process, used in numerous industrial applications. Despite intensive research over decades, a reliable model of nucleate pool boiling is still not available. This paper presents a numerical and experimental investigation of nucleate boiling from artificial nucleation sites.The numerical investigation described in the first section of the paper is carried out by a hybrid mechanistic numerical code first developed at the University of Ljubljana to simulate the temperature field in a heated stainless steel plate with a large number of nucleation sites during pool boiling of water at atmospheric pressure. It is now being redeveloped to interpret experiments on pool boiling at artificial sites on a silicon plate and as a design tool to investigate different arrangements of sites to achieve high heat fluxes. The code combines full simulation of the temperature field in the solid wall with simplified models or correlations for processes in the liquid-vapour region. The current capabilities and limitations of the code are reviewed and improvements are discussed. Examples are given of the removal of computational constraints on the activation of sites in close proximity and improvements to the bubble growth model. Preliminary simulations are presented to compare the wall conditions to be used in the experiments on silicon at Edinburgh University with the conditions in current experiments on thin metal foils at Ljubljana.An experimental rig for boiling experiments with artificial cavities on a 0.38 mm thick silicon wafer immersed in FC-72, developed at Edinburgh University, is described in the second part of the paper.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Thermal Engineering - Volume 29, Issue 7, May 2009, Pages 1327–1337
نویسندگان
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