Modeling heat generation in high power density nanometer scale GaAs/InGaAs/AlGaAs PHEMT

A model of heat generation rate for two-dimensional semiconductor devices is established. Electron motion and electron–phonon scattering in nanometer scale GaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) under high power density are simulated by Monte Carlo method. Parameters such as electric field, phonon temperature, and heat generation rate distribution are obtained by solving Boltzmann equation and phonon conservation equations. The heat generation rate distribution and the number of net optical-phonon emission in the presence of different applied voltages are presented. The electric field, electron density, phonon emission and absorption, and lattice temperature are investigated to elucidate the mechanism of heat generation in the devices.