Modified electrochemical charge storage properties of h-BN/rGO superlattice through the transition from n to p type semiconductor by fluorine doping

Modified electrochemical charge storage properties of h-BN/rGO superlattice through the transition from n to p type semiconductor by fluorine doping

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Engineering Journal - Volume 339, 1 May 2018, Pages 334-345

Sanjit Saha, Pranab Samanta, Naresh C. Murmu, Amit Banerjee, R. Sankar Ganesh, Hiroshi Inokawa, Tapas Kuila,