کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
659786 | 1458109 | 2011 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanoscale phonon transport within silicon structures subjected to internal heat generation was explored. A Monte Carlo simulation was used. The simulation procedures differed from the current existing methods in which phonons below a predefined “reference temperature” were not accounted to reduce memory storage and computational resources. Results indicated that the heat diffusion equation significantly underestimates temperature distribution at nanoscales in the presence of an external heat source. Discussions on temperature distribution inside silicon thin film when heated by a pulsed laser, an electron beam or due to near-field thermal radiation effects were also provided.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 54, Issues 9–10, April 2011, Pages 1825–1838
Journal: International Journal of Heat and Mass Transfer - Volume 54, Issues 9–10, April 2011, Pages 1825–1838
نویسندگان
Basil T. Wong, Mathieu Francoeur, M. Pinar Mengüç,