کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6746433 | 504993 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of tungsten-carbon mixed layer and irradiation defects on deuterium retention behavior in tungsten
ترجمه فارسی عنوان
تأثیر لایه مخلوط تنگستن-کربن و نقص اشعه در رفتار نگهدارنده دوتریوم در تنگستن
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
مهندسی انرژی و فناوری های برق
چکیده انگلیسی
The D2+ fluence dependence on deuterium (D) retention was studied to clarify the D retention mechanism in tungsten. The additional D desorption stage was observed around 660Â K in the TDS spectrum for a sample implanted with D2+ up to the fluence of 1023Â D+Â mâ2, which desorption stage was not observed the D2+ implanted sample with the fluence less than 1022Â D+Â mâ2. The TEM observation showed that the highly dense voids were formed in tungsten by D2+ implantation with the fluence of 1023Â D+Â mâ2, considering that the D would be trapped by voids. To understand the D trapping by voids in C+ implanted tungsten, C+-D2+ sequential implantation experiments at various C+ implantation temperatures were performed. It was found that the amount of D desorbed around 560Â K was increased by increasing the C+ implantation temperature. The formation of the voids was observed with increasing the C+ implantation temperature by TEM, indicating that the increase of D desorption around 560Â K was caused by the formation of voids. However, the desorption temperature of D trapped by voids in C+ implanted sample was lower than that in D2+ implanted one. TEM observation and XPS measurement indicated that this difference was caused by the increase of void size and/or the presence of implanted carbon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Fusion Engineering and Design - Volume 88, Issues 9â10, October 2013, Pages 1827-1830
Journal: Fusion Engineering and Design - Volume 88, Issues 9â10, October 2013, Pages 1827-1830
نویسندگان
Ryo Miura, Tetsuo Fujishima, Hiromichi Uchimura, Kensuke Toda, Makoto Kobayashi, Naoko Ashikawa, Akio Sagara, Naoaki Yoshida, Yuji Hatano, Yasuhisa Oya, Kenji Okuno,