Preparation and characterization of CuInxAl1−xS2 films using the sulfurization of metal precursors for photoelectrochemical applications

► CuInxAl1−xS2 samples were deposited onto substrates using thermally evaporated. ► Samples were p-type semiconductors. ► The flat-band potentials of samples to be −0.65 to −0.08 V vs. Ag/AgCl electrode. ► Sample with Al/[In + Al] molar ratio of 0.12 has a maximum PEC response.