کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6942222 | 1450225 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
50-830Â MHz noise and distortion canceling CMOS low noise amplifier
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper, a modified resistive shunt feedback topology is proposed that performs noise cancelation and serves as an opposite polarity non-linearity generator to cancel the distortion produced by the main stage. The proposed topology has a bandwidth similar to a resistive shunt feedback LNA, but with a superior noise figure (NF) and linearity. The proposed wideband LNA is fabricated in 130Â nm CMOS technology and occupies an area of 0.5Â mm2. Measured results depict 3-dB bandwidth from 50 to 830Â MHz. The measured gain and NF at 420Â MHz are 17Â dB and 2.2Â dB, respectively. The high value of the 1/f noise is one of the key problems in low-frequency CMOS designs. The proposed topology also addresses this challenge and a low NF is attained at low frequencies. Measured S11 and S22 are better than â8.9Â dB and â8.5Â dB, respectively within the 0.05-1Â GHz band. The 1-dB compression point is â11.5Â dBm at 700Â MHz, while the IIP3 is â6.3Â dBm. The forward core consumes 14Â mW from a 1.8Â V supply. This LNA is suitable for VHF and UHF SDR communication receivers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Integration, the VLSI Journal - Volume 60, January 2018, Pages 63-73
Journal: Integration, the VLSI Journal - Volume 60, January 2018, Pages 63-73
نویسندگان
Sana Arshad, Rashad Ramzan, Qamar-ul Wahab,