کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6945011 1450454 2018 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A 65 nm linear broad-band differential Low Noise Amplifier using post distortion technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A 65 nm linear broad-band differential Low Noise Amplifier using post distortion technique
چکیده انگلیسی
The paper describes the design of a differential broadband LNA covering the frequency range from 800 MHz to 5 GHz in 65 nm CMOS technology. The work proposes a novel linearization technique for high-frequency wide-band applications using an active feedback as post-distortion. The technique is applied to a wide-band differential common gate (CG) LNA employing noise cancelation method. Post-layout simulations exhibit that the proposed technique increases IIP3 and P1dB considerably to +11.9 and +1 dBm, respectively at 1.8 GHz. The LNA achieves voltage gain of 13.7-13.9 dB, noise figure of 3-3.28 dB, and S11 less than −10 dB, while consuming only 16.5 mW. The layout schematic occupies 0.515 × 0.220 mm2 of chip area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 74, April 2018, Pages 24-33
نویسندگان
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