کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6945680 1450518 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET
چکیده انگلیسی
In this work, we have studied gate length (Lgate) scalability of Si0.55Ge0.45 Implant Free Quantum Well (IFQW) pFET with raised and embedded Si0.75Ge0.25 source/drain structures. Although embedded SiGe device shows higher Idsat which can be attributed to thinner Tinv (more scavenging of High-k interfacial layer), raised SiGe device has better short channel control than embedded SiGe device thanks to shallower junction depth. Raised SiGe device can scale down Lgate by 4 nm compared to embedded SiGe device while maintaining identical Ioff. This results in superior intrinsic delay in raised SiGe device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 83, April 2018, Pages 157-161
نویسندگان
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