Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET

In this work, we have studied gate length (Lgate) scalability of Si0.55Ge0.45 Implant Free Quantum Well (IFQW) pFET with raised and embedded Si0.75Ge0.25 source/drain structures. Although embedded SiGe device shows higher Idsat which can be attributed to thinner Tinv (more scavenging of High-k interfacial layer), raised SiGe device has better short channel control than embedded SiGe device thanks to shallower junction depth. Raised SiGe device can scale down Lgate by 4 nm compared to embedded SiGe device while maintaining identical Ioff. This results in superior intrinsic delay in raised SiGe device.