کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945862 | 1450520 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of BTI characteristics and its behavior on 10Â nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of BTI characteristics and its behavior on 10Â nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack Investigation of BTI characteristics and its behavior on 10Â nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack](/preview/png/6945862.png)
چکیده انگلیسی
Bias-Temperature Instability (BTI) is one of the key device reliability concerns for both digital and analog circuit operations. Features of work-function metal (WFM) for VT modulation in 10Â nm FinFET process technology results in WFM dependent BTI characteristics. Similar levels of aging degradation to those of previous 14Â nm technology were observed in both DC and AC operations. As BTI-induced VT variability is expected to increase with 3D fin dimension scaling, such variability must be accurately characterized and considered for circuit designs. This paper reports the impact of transistor- level BTI degradation on circuits by studying Ring Oscillator (RO) and SRAM. The SRAM cell stabilities in terms of SNM (Static Noise Margin) and WRM (Write Margin) were further studied through SRAM HTOL stresses by characterizing Vmin shift. Robust 10Â nm SRAM and product level HTOL reliability up to 500Â h were demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 81, February 2018, Pages 201-209
Journal: Microelectronics Reliability - Volume 81, February 2018, Pages 201-209
نویسندگان
Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae,