Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation

This study is driven by the need to optimize reliability and failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. Nowadays, single event effect (SEE) evaluations due to radiation impacts are critical in fault tolerance and security field. The prediction of a SEE occurring on electronic devices is proposed by the determination and modeling of the phenomena under pulsed laser stimulation. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an inverter in a triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals the possible activation change of the parasitic bipolar transistors. Based on these experimental measurements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation. Therefore this electrical model could be used as a tool for characterizing more complex CMOS circuits under photoelectrical laser stimulation.