کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6946789 | 1450547 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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![عکس صفحه اول مقاله: Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors](/preview/png/6946789.png)
چکیده انگلیسی
The post-breakdown conduction characteristics of holmium titanium oxide (HoTiOx)-based metal-insulator-metal capacitors fabricated by the atomic layer deposition technique on Si substrates were investigated. Diode-like and power-law models were fitted to the experimental current-voltage (I-V) curves and the results assessed with the aim of detecting any possible correlation among the model parameters. It was found that the number of parameters involved can be reduced in both cases and that for the power-law model a single parameter is solely required to approximate the I-V curves in a wide current range (from 10â11 to 10â4Â A). This property, which has also been observed in a variety of material systems, was used to simulate the bipolar switching behavior exhibited by the I-V characteristics. The connection with the physics of electron transport through atom-sized constrictions is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 1707-1711
Journal: Microelectronics Reliability - Volume 54, Issues 9â10, SeptemberâOctober 2014, Pages 1707-1711
نویسندگان
J. Blasco, H. Castán, H. GarcÃa, S. Dueñas, J. Suñé, M. Kemell, K. Kukli, M. Ritala, M. Leskelä, E. Miranda,