کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6946836 1450547 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
RTN distribution comparison for bulk, FDSOI and FinFETs devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
RTN distribution comparison for bulk, FDSOI and FinFETs devices
چکیده انگلیسی
In this paper we investigate the sensitivity of RTN noise spectra to statistical variability alone and in combination with variability in the traps properties, such as trap level and trap activation energy. By means of 3D statistical simulation, we demonstrate the latter to be mostly responsible for noise density spectra dispersion, due to its large impact on the RTN characteristic time. As a result FinFETs devices are shown to be slightly more sensitive to RTN than FDSOI devices. In comparison bulk MOSFETs are strongly disadvantaged by the statistical variability associated with high channel doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issues 9–10, September–October 2014, Pages 1749-1752
نویسندگان
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