کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6946849 1450547 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures
چکیده انگلیسی
In this paper advanced sample preparation techniques based on focused ion beam (FIB) optimized for TEM investigation of high electron mobility transistor (HEMT) structures are presented. It is shown that the usage of an innovative in-situ lift-out method combined with X2 window and backside milling techniques as well as live thickness control and end point detection can significantly improve the quality of electron transparent samples required for high resolution TEM investigations. This advanced preparation flow is evaluated and demonstrated at GaN HEMT structures for atomic resolution TEM investigation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issues 9–10, September–October 2014, Pages 1785-1789
نویسندگان
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