Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Growth of 3C-SiC on (100) Si has been performed via chemical vapor deposition under two pressure regimes (low and atmospheric pressure) in the early stage of growth. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) have been conducted to study the initial stage of growth while X-ray diffractometry (XRD) and TEM have been used to analyze thicker films and to detect and quantify defects, resulting in a comprehensive and detailed investigation of 3C-SiC structural defects. We have found out that the secondary nucleation of 3C-SiC island growth leads to a higher defect generation rate and, at the same time, to a more effective defect elimination rate. Hillocks found on the surface of thin samples grown under reduced pressure conditions are more pronounced as they seem to be a consequence of twins created in the early stage of growth. Finally, a different initial nucleation density (in the two pressure regimes considered) does not strongly influence stacking fault and microtwin density when growth of thick 3C-SiC films is performed. A very strong influence is indeed observed when 3C-SiC thickness is limited to hundreds of nanometers.