کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701099 | 890978 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface defects induced by in-situ annealing of hydrogenated polycrystalline diamond studied by high resolution electron energy loss spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Plasma hydrogenation of polycrystalline diamond films results in a fully hydrogenated well-ordered diamond surface and etching of the amorphous phase located at grain boundaries. Vacuum annealing to 1000 °C followed by in-situ hydrogenation by thermal activated hydrogen of the bared diamond surface results in the formation of sp3-CHx adsorbed groups located on the top surface. Annealing of the in-situ hydrogenated surface to 600 °C results in desorption of these species and partial reconstruction of the film surface. Some irreversible surface degradation was detected in the in-situ annealed and hydrogenated surface compared to the state of the surface obtained upon plasma hydrogenation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 17, Issue 6, June 2008, Pages 949–953
Journal: Diamond and Related Materials - Volume 17, Issue 6, June 2008, Pages 949–953
نویسندگان
A. Lafosse, M. Bertin, Sh. Michaelson, R. Azria, R. Akhvlediani, A. Hoffman,