کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
701462 891003 2006 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Compositional and structural dependencies of film properties
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Compositional and structural dependencies of film properties
چکیده انگلیسی

The physical, optical, and mechanical properties of amorphous hydrogenated silicon carbonitride (a-Si:C:N:H) films produced by the remote hydrogen plasma chemical vapor deposition (RP-CVD) from (dimethylamino)dimethylsilane have been investigated in relation to their chemical composition and structure. The films deposited at different substrate temperature (30–400 °C) were characterized in terms of their density, refractive index, adhesion to a substrate, hardness, elastic modulus, friction coefficient, and resistance to wear predicted from the “plasticity index” values. The correlations between the film compositional parameters, expressed by the atomic concentration ratios N/Si and C/Si, as well as structural parameters described by the relative integrated intensities of the absorption IR bands from the Si–N, Si–C, and C–N bonds, and the XPS Si2p band from the Si–C bonds (controlled by substrate temperature) were investigated. On the basis of the results of these studies, reasonable compositional and structural dependencies of film properties have been determined.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issue 10, October 2006, Pages 1650–1658
نویسندگان
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