Simulation of temperature and gas flow distributions in region close to a diamond substrate with finite thickness

We have simulated distributions of temperature and gas flow inside a reactor for chemical vapor depositions of diamond. In the simulation, a diamond substrate with finite thickness is taken into account. The distributions in region close to the substrate are studied for various types of substrate holders. Qualitative correspondences between the calculated results and experimentally observed macroscopic surface morphologies of diamond are found. These correspondences imply importance of controlling the local distributions for syntheses of thick single crystal diamond.