Manual turbostratic stacked graphene transistor: A study on electrical properties and device potential

• We clarified the transport mechanism of highly disordered graphene stacks, following nearest neighbor hopping through variable range hopping mechanism by lowering the temperature from 298K to 20 K.
• Band overlap was observed, as a result of stacking in the disordered graphene layers.
• The mobility obtained with this method is higherfor trilayer graphene than for FETs using the growth of MLG with a turbostratic structure.

This study investigated the potential of turbostratic stacking of graphene few-layers produced using the consecutive electrochemical delamination method for electronic applications. The temperature dependence of electrical conductivity was measured to identify the transport mechanisms and band overlap. By lowering the temperature from 298 to 20 K, it was shown that these highly disordered structures follow nearest neighbor hopping through the variable range hopping mechanism. Variations in band overlap for samples versus carrier concentration were extracted and show that trilayer graphene has the best electrical properties at a mobility of about 1000 cm2/V s and the lowest band overlap at 28.5 meV which is promising structure for optoelectronic applications.

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