کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701515 | 891008 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of some substitutional defects on the relative stability and cohesive properties of cubic boron nitride
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Substitutional defects C, Si, Al and Ti included in c-BN are examined using ab initio calculations employing various sizes of supercell to simulate the dependence of the electronic properties on defect concentration. We suggest some of these defects may be readily absorbed into c-BN occupying either of the B and N lattice sites. However, apart from C, the rate of defect solubility markedly changes with defect concentration. The change in compressibility as measured by a substantial lowering of the Bulk Modulus strongly suggests that there would be a related softening of c-BN critically depending on the nominal defect concentration and the chemical character of the defect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issue 1, January 2006, Pages 67–70
Journal: Diamond and Related Materials - Volume 15, Issue 1, January 2006, Pages 67–70
نویسندگان
J.E. Lowther, I.J. Sigalas,