A novel structure to improve DIBL in fully-depleted silicon-on-diamond substrate

• A novel silicon-on-diamond device structure is disclosed.
• The new structure enhances short channel effects.
• A capacitance expression for the device body is extracted.
• Hydrodynamic numeric analysis is performed to characterize the new device.
• Results demonstrate performance advantage of the new structure.

In this paper, a novel silicon-on-diamond (SOD) MOSFET structure is proposed. The new structure eliminates the degraded drain induced barrier lowering (DIBL) inherently observed in SOD devices. A second insulating layer over the buried diamond layer is integrated which partially covers the diamond layer. An expression for the total body capacitance through the insulating layers is obtained. Using analytical model, the second insulating layer dimensions are computed. In order to evaluate the impact of second insulating layer on the device characteristics, hydrodynamic numeric analysis is performed. Device simulation results verified the analytical model in DIBL improvement. Maximum lattice temperature of the new structure is well below SOI device and 5% higher in comparison with SOD substrate. The device simulation results demonstrate short channel effects improvement and suppressed self-heating effects.