کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
702380 | 891096 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carbon nanotubes/SiC whiskers composite prepared by CVD method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Carbon nanotubes/SiC whiskers composite prepared by CVD method Carbon nanotubes/SiC whiskers composite prepared by CVD method](/preview/png/702380.png)
چکیده انگلیسی
Selective growth of carbon nanotubes (CNTs) on silicon carbide (SiC) substrate will create some new applications in composites and electronic devices by combining their mechanical and physical properties. Multi-walled CNTs were successfully grown on SiC whiskers using a conventional xylene–ferrocene chemical vapor deposition process. A thin oxide layer was created on the surface of the SiC whiskers by high-temperature annealing in air before CNT growth. The effect of catalyst morphology and chemistry on the growth of CNTs was analyzed. Our technique may be further applied to the controlled growth of CNTs on any other SiC substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 16, Issue 3, March 2007, Pages 531–536
Journal: Diamond and Related Materials - Volume 16, Issue 3, March 2007, Pages 531–536
نویسندگان
Lijie Ci, Zhenyu Ryu, Neng Yun Jin-Phillipp, Manfred Rühle,