Low contact resistance metals for graphene based devices

In order to search a guideline to prepare low-resistance ohmic contacts to graphene by depositing a single metal element, the contact resistance (RC) is measured by a transmission line method (TLM) for a variety of metals (Ti, Ag, Co, Cr, Fe, Ni, and Pd) contacting to the graphene channel. To obtain the precise RC value, we fabricate a defined rectangular graphene channel and a TLM pattern with uniform interface area and channel width. The RC value as small as 700 ± 500 Ωμm for Ti contact is obtained, which is smaller than the value reported previously. In addition, we find that the RC is not strongly related to the metal work function and is significantly affected by the microstructure of the metals. We conclude that the chemical cleaning and the control of the microstructure of the metal films are essential for preparing the low-resistance ohmic contact to achieve the direct contact between the metal and the graphene.

► A transmission line method (TLM) pattern with a uniform interface area was fabricated for single – and few – layer graphene.
► The contact resistance (RC) for various metals (Ti, Ag, Co, Cr, Fe, Ni, and Pd) was investigated by the TLM.
► The RC values are not strongly related to metal work function but significantly affected by the microstructure of the metals.
► The metal deposition process is essential for obtaining a low-resistance ohmic contact to the grapheme.