کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
702654 | 1460812 | 2010 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Structure and electrical properties of a-C:H thin films deposited by RF sputtering Structure and electrical properties of a-C:H thin films deposited by RF sputtering](/preview/png/702654.png)
We investigated the film structure and the electrical properties of hydrogenated amorphous carbon (a-C:H) thin films. a-C:H thin films were prepared by RF magnetron sputtering. Two different RF power sources of 13.56 MHz and 60 MHz were used to deposit the a-C:H films. The bonding hydrogen concentration varied from 1.6 × 1022 cm− 3 to 8.6 × 1022 cm− 3. The concentration of incorporated hydrogen atoms varied from 18 to 57 at.%. The optical gap increased from 1.58 eV to 2.56 eV with increasing the hydrogen concentration. The resistivity increased from 1013 Ω cm to 1015 Ω cm with increasing the hydrogen concentration. The permittivity measured at 1 MHz decreased from 5.6 to 2.3 with increasing the hydrogen concentration. These results suggest that the film structure and electrical properties can be controlled by the hydrogen concentration.
Journal: Diamond and Related Materials - Volume 19, Issues 7–9, July–September 2010, Pages 695–698