CVD diamond Schottky barrier diode, carrying out and characterization

A p-type diamond Schottky barrier diode (SBD) on homoepitaxial CVD diamond is presented.The technologic steps required to carry out the experimental device are described in this paper. The B-acceptors concentration and the barrier height have been extracted from C–V measurements leading to Ns ∼ 1.2 × 1017 cm− 3 and ΦΒ = 1.8 eV respectively. The current–voltage experimental measurements performed at room temperature have shown high current density in the range of 900 A/cm2. However, the breakdown voltage of the device was limited to 25 V, this low reverse value suggest the presence of a large defect density in the bulk.