کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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702742 | 891108 | 2009 | 4 صفحه PDF | دانلود رایگان |

The lift-off process using ion implantation has recently been applied to produce large and thick single-crystal diamond plates by chemical vapor deposition (CVD). CVD growth conditions for undoped, as opposed to nitrogen-doped, diamond were investigated to improve the purity of plates produced by this technique. This utilized apparatus identical to that for high-rate growth with nitrogen addition under high-density plasma. By lowering the growth temperature to 900 °C, an undoped single-crystal CVD diamond plate with a maximum length of 9 mm and thickness of 0.47 mm was successfully produced without formation of non-epitaxial crystallites. The UV–Vis–NIR transmission spectrum of this plate was identical to high-pressure high-temperature (HPHT) synthetic IIa diamond, suggesting high purity of the plate. To increase the size of single-crystal CVD diamond plates, a process to enlarge the seed crystal by combining the lift-off process and a side-surface growth technique is proposed. By this process, a half-inch single-crystal CVD diamond seed crystal was successfully synthesized and half-inch freestanding single-crystal CVD diamond plates were produced from the seed.
Journal: Diamond and Related Materials - Volume 18, Issue 10, October 2009, Pages 1258–1261