کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
702751 891108 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Technology of passivated surface channel MESFETs with modified gate structures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Technology of passivated surface channel MESFETs with modified gate structures
چکیده انگلیسی

Surface channel MESFETs have suffered from instabilities and drift in the past. To overcome these effects a suitable device passivation seems to be one of the key aspects. In this investigation such a passivation scheme on the basis of Atomic Layer Deposition (ALD) of Al2O3 has been developed and combined with advanced gate structures, like a field plate and a second MOS gate (in a dual gate configuration).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 18, Issue 10, October 2009, Pages 1306–1309
نویسندگان
, , ,