کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703182 | 891128 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical analyses of a microwave plasma chemical vapor deposition reactor for thick diamond syntheses
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have carried out simulations of microwave plasmas inside a reactor for thick diamond syntheses. In a model reactor used in the calculation, a diamond substrate with finite thickness and area is taken into account. Distributions of electric field, density of microwave power absorbed by the plasma, temperatures and flow field of gas have been studied not only in a bulk region inside a reactor but also a local region around the substrate surface. Numerically predicted distributions of (1) microwave power density, (2) temperature on the top surface of the substrate, and (3) gas flow around the substrate imply that the adopted arrangement of the substrate is not desirable for continuous growth of large diamond crystals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issue 9, September 2006, Pages 1389–1394
Journal: Diamond and Related Materials - Volume 15, Issue 9, September 2006, Pages 1389–1394
نویسندگان
H. Yamada, A. Chayahara, Y. Mokuno, Y. Horino, S. Shikata,