کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703312 | 1460821 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrical and optical characterizations of (001)-oriented homoepitaxial diamond p–n junction Electrical and optical characterizations of (001)-oriented homoepitaxial diamond p–n junction](/preview/png/703312.png)
We have succeeded in fabricating (001)-oriented diamond p–n junctions with clear diode characteristics and conformed ultraviolet (UV) light emission by current-injection at room temperature. As p–n junctions, a phosphorus doped n-type layer was formed on (001)-oriented boron doped p-type one by applying an optimized homoepitaxial growth technique based on microwave plasma-enhanced chemical vapor deposition. Current–voltage characteristics showed a rectification ratio of 103 at ± 30 V at room temperature. The existence of the space-charge layer at the vicinity of the p–n junction was confirmed from capacitance–voltage (C–V) characteristics. From C− 2–V characteristics at 773 K, the built-in potential was estimated as approximately 4.7 V. A strong UV light emission at 235 nm due to free exciton recombination with transverse-optical phonon was observed at forward current over 36 mA in these p–n junctions.
Journal: Diamond and Related Materials - Volume 15, Issues 4–8, April–August 2006, Pages 513–516