کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
703320 1460821 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Nitrogen incorporation in a homoepitaxial diamond thin film
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Nitrogen incorporation in a homoepitaxial diamond thin film
چکیده انگلیسی

The influence of nitrogen incorporated in a homoepitaxial diamond thin film on such optical properties such as excitonic emission and optical transition via defect centers was studied in detail by high-resolution cathodoluminescence. It was found that the emission line associated with a nitrogen-vacancy complex center (H3 center) showed spectral narrowing as well as a shift in the peak position to the low-energy side by nitrogen doping. Furthermore, the temperature dependence of the excitonic emission line indicated that the exciton ground state, which is six-fold degenerated in the undoped diamond, was split by nitrogen doping. These results strongly indicate that that nitrogen incorporation in diamond induced an internal stress which modified the exciton ground state as well as the electronic structure of nitrogen-related defects.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issues 4–8, April–August 2006, Pages 554–558
نویسندگان
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