کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
703331 1460821 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Highly efficient doping of boron into high-quality homoepitaxial diamond films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Highly efficient doping of boron into high-quality homoepitaxial diamond films
چکیده انگلیسی

High-quality boron-doped homoepitaxial diamond (100) films were grown using high-power microwave plasma chemical vapor deposition (MPCVD). Results showed that the incorporation efficiency of boron from gas phase was increased by two orders of magnitude compared to those of conventional growth conditions using high-density plasma. Boron-doped crystal thus grown with the low B / C ratio of 50 ppm in the gas phase had reasonably low resistivity of 2 Ω cm at 290 K, whereas Hall mobility of 830 cm2 V s− 1 at this temperature was higher than those reported previous for such resistivity. The highly boron-doped film showed strong free exciton recombination emissions with a bound exciton component in the cathodoluminescence spectra taken at room temperature, reflecting the considerably high density of the substitutional boron in the film despite its low density of electronic defects. The diamond growth rate in the high-power MPCVD was 3.5 μm h− 1. The highest room-temperature Hall mobility achieved in this study was 1620 cm2 V s− 1. These results indicate that the resultant high-rate growth with high-power MPCVD is advantageous for depositing high-quality and conductive diamond films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issues 4–8, April–August 2006, Pages 602–606
نویسندگان
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