کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703486 | 1460817 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-pressure and high-temperature annealing of diamond ion-implanted with various elements
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We tried to dope various ions (B, Al, Ga, Mg, and Be) into diamond films by combining ion-implantation and high-pressure and high-temperature annealing. In cathodoluminescence spectra of Be-implanted films, previously unreported emissions appeared at 4.843, 4.687, 4.533 eV. These emissions were only observed from Be-implanted films, and they were not observed from B, Al, Ga, and Mg-implanted ones. The 4.843-eV line is assigned to zero phonon line, and the 4.687- and 4.533-eV lines are its phonon replicas because the energy difference between each peak is close to the optical phonon energy of diamond (~ 0.15 eV). The temperature dependence of the 4.843-eV line is similar to that of bound excitons.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 17, Issues 7–10, July–October 2008, Pages 1269–1272
Journal: Diamond and Related Materials - Volume 17, Issues 7–10, July–October 2008, Pages 1269–1272
نویسندگان
K. Ueda, M. Kasu,