Aluminum nitride deep-ultraviolet light-emitting p–n junction diodes

This paper reviews our work on aluminum nitride (AlN) p–n junction light-emitting diodes (LEDs). N-type AlN was obtained by Si doping. By reducing dislocation density in n-type Si-doped AlN, we achieved a room-temperature electron mobility of 426 cm2 V− 1 s− 1. We analyzed the temperature dependence of the electron mobility and how the electron mobility is limited by specific scattering mechanisms. p-type AlN was obtained by Mg doping and its acceptor ionization energy was estimated to be 630 meV. We fabricated AlN p–n junction LEDs and observed electroluminescence (EL) with a wavelength of approximately 210 nm, the shortest wavelength ever observed among semiconductors. The EL was assigned to the near-band-edge emission of AlN.