کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703574 | 891144 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
On the basis of first-principle calculations for a series of B-doped supercells models, we confirmed that the lattice parameter increases with the boron concentration in a proximity linear relation. The electronic structure shows that the impurity band induced by B-complexes except B dimer mixes with valence band and the Fermi level locates in the valence band in heavily boron-doped diamond, which may well explain recent superconducting transition experimental findings. Our results indicate that the superconducting critical temperature TC is not only related to the B concentration, but also affected by the B configurations in diamond lattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 17, Issue 3, March 2008, Pages 234–239
Journal: Diamond and Related Materials - Volume 17, Issue 3, March 2008, Pages 234–239
نویسندگان
Run Long, Ying Dai, Meng Guo, Lin Yu, Baibiao Huang, Ruiqin Zhang, Wenjun Zhang,