کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703738 | 1460822 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrochemical properties of undoped hydrogen terminated CVD diamond Electrochemical properties of undoped hydrogen terminated CVD diamond](/preview/png/703738.png)
The electronic properties of hydrogen terminated intrinsic single crystalline CVD diamond in redox–electrolytic solutions are characterized by cyclic voltammetry experiments and pH-sensitive measurements of ion-sensitive field effect transistor (ISFET) structures. The data show insulator-metal transitions of diamond if immersed into redox–electrolyte solutions with chemical potentials (unoccupied states) below the valence-band maximum. Cyclic voltammetry current peaks are electron exchange rate limited due to the small density of holes in a few Ångström thick conducting layer at the surface of diamond. H-terminated diamond is sensitive to pH of electrolytes, following the Nernst prediction with about − 58 mV/pH. Due to Coulomb repulsion of H+-ions from the H-terminated diamond surface, the enlarged tunneling distance works like a gate insulator and is indicated as reason for the confinement of holes in ISFET structures.
Journal: Diamond and Related Materials - Volume 15, Issues 2–3, February–March 2006, Pages 264–268