کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7058732 1458077 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A study of near-infrared nanosecond laser ablation of silicon carbide
ترجمه فارسی عنوان
مطالعهی حذف لایسنس نانوسکیان نزدیک مادون قرمز سیلیکون کاربید
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی جریان سیال و فرایندهای انتقال
چکیده انگلیسی
This work presents a fundamental study about ablation threshold, absorption coefficient and absorption mechanism of silicon carbide (SiC) in the laser drilling process. Experimental study has been performed on single infrared (1064 nm) ns pulse laser ablation of SiC at various fluence values. Hole diameters were measured to predict the absorption threshold. Based on the ablation threshold, an average absorption coefficient of SiC at infrared wavelength during the laser ablation process is calculated. The result is discussed based on absorption coefficient dependence on doping concentration and temperature in semiconductor. A preliminary model is proposed that accounts for the heat conduction and surface evaporation to predict the cross-sectional shape of drilling hole. Analytical modeling results are in good agreement with observed features produced from the laser. The paper will conclude with suggestions for further research and potential applications for the work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 65, October 2013, Pages 713-718
نویسندگان
, , ,