Atomic-level modeling of a silicon nanofilm irradiated by ultrashort-pulsed laser bursts

► A combined molecular dynamics and ultrafast energy transport model is proposed. ► Response of a silicon film caused by femtosecond laser bursts is studied. ► The more the pulses or the longer the pulse separation time, the lower the carrier temperature. ► Thermal stress wave is weakened by increasing pulse separation time or pulse number.