کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7150212 1462186 2018 28 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics
چکیده انگلیسی
The amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) current - voltage (I-V) characteristics can be significantly distorted by either series resistance, RS, associated with the source/drain (S/D) contact regions or/and density of states. To isolate Rs contribution we used the five terminals coplanar homojunction TFT structure. Experimental results have shown this device structure has a low S/D contact resistance that do not contribute to observed I-V nonlinearity. We have shown using combination of the experimental data and two- dimensional simulations that the observed nonlinearity can be associated with the conduction band-tail states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 147, September 2018, Pages 51-57
نویسندگان
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