کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150309 | 1462189 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte](/preview/png/7150309.png)
چکیده انگلیسی
Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5â¯V) and a good performance with a high current on/off ratio (Ion/off) of 1â¯Ãâ¯105, a large electron mobility (µ) of 47.5â¯cm2/Vâ¯s, and a small subthreshold swing (S) of 0.26â¯V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of â¯â¼4 at the operation voltage of only â¯â¼1â¯V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 144, June 2018, Pages 1-6
Journal: Solid-State Electronics - Volume 144, June 2018, Pages 1-6
نویسندگان
Junjie Guo, Dingdong Xie, Bingchu Yang, Jie Jiang,