کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7150428 1462190 2018 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field
چکیده انگلیسی
In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 143, May 2018, Pages 90-96
نویسندگان
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