کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7150559 1462193 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET
چکیده انگلیسی
The investigation of the Dual-k spacer through comparative analysis of single nanowire-FET(NWFET)/3-stack NWFET and underlap/overlap channel is conducted. It is known that the dug 3-stack NWFET has better delay characteristics than single NWFET with the use of high permittivity material of Cin in Dual-k spacer structure. In addition, there is no difference of delay between overlap and underlap channel when it used Dual-k spacer structure but underlap channel of Dual-k 3-stack NWFET shows better short channel immunity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 140, February 2018, Pages 64-68
نویسندگان
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