| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 7150628 | 1462194 | 2018 | 5 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													سایر رشته های مهندسی
													مهندسی برق و الکترونیک
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												Complete miniaturized on-chip integrated solid-state capacitors have been fabricated based on conformal coating of vertically aligned carbon nanofibers (VACNFs), using a CMOS temperature compatible microfabrication processes. The 5â¯Âµm long VACNFs, operating as electrode, are grown on a silicon substrate and conformally coated by aluminum oxide dielectric using atomic layer deposition (ALD) technique. The areal (footprint) capacitance density value of 11-15â¯nF/mm2 is realized with high reproducibility. The CMOS temperature compatible microfabrication, ultra-low profile (less than 7â¯Âµm thickness) and high capacitance density would enables direct integration of micro energy storage devices on the active CMOS chip, multi-chip package and passives on silicon or glass interposer. A model is developed to calculate the surface area of VACNFs and the effective capacitance from the devices. It is thereby shown that 71% of surface area of the VACNFs has contributed to the measured capacitance, and by using the entire area the capacitance can potentially be increased.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 139, January 2018, Pages 75-79
											Journal: Solid-State Electronics - Volume 139, January 2018, Pages 75-79
نویسندگان
												Amin M. Saleem, Rickard Andersson, Vincent Desmaris, Peter Enoksson,