کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7150628 1462194 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process
چکیده انگلیسی
Complete miniaturized on-chip integrated solid-state capacitors have been fabricated based on conformal coating of vertically aligned carbon nanofibers (VACNFs), using a CMOS temperature compatible microfabrication processes. The 5 µm long VACNFs, operating as electrode, are grown on a silicon substrate and conformally coated by aluminum oxide dielectric using atomic layer deposition (ALD) technique. The areal (footprint) capacitance density value of 11-15 nF/mm2 is realized with high reproducibility. The CMOS temperature compatible microfabrication, ultra-low profile (less than 7 µm thickness) and high capacitance density would enables direct integration of micro energy storage devices on the active CMOS chip, multi-chip package and passives on silicon or glass interposer. A model is developed to calculate the surface area of VACNFs and the effective capacitance from the devices. It is thereby shown that 71% of surface area of the VACNFs has contributed to the measured capacitance, and by using the entire area the capacitance can potentially be increased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 139, January 2018, Pages 75-79
نویسندگان
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