کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150647 | 1462194 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MEMS fabrication and frequency sweep for suspending beam and plate electrode in electrostatic capacitor
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
We report a MEMS fabrication and frequency sweep for a high-order mode suspending beam and plate layer in electrostatic micro-gap semiconductor capacitor. This suspended beam and plate was designed with silicon oxide (SiO2) film which was fabricated using bulk silicon micromachining technology on both side of a silicon substrate. The designed semiconductor capacitors were driven by a bias direct current (DC) and a sweep frequency alternative current (AC) in a room temperature for an electrical response test. Finite element calculating software was used to evaluate the deformation mode around its high-order response frequency. Compared a single capacitor with a high-order response frequency (0.42â¯MHz) and a 1â¯Ãâ¯2 array parallel capacitor, we found that the 1â¯Ãâ¯2 array parallel capacitor had a broader high-order response range. And it concluded that a DC bias voltage can be used to modulate a high-order response frequency for both a single and 1â¯Ãâ¯2 array parallel capacitors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 139, January 2018, Pages 94-100
Journal: Solid-State Electronics - Volume 139, January 2018, Pages 94-100
نویسندگان
Jianxiong Zhu, Weixing Song,