کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150791 | 1462216 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, a parametric statistical analysis of the low-frequency noise (LFN) in very small area (W·L â 10â3 μm2) 14 nm fully depleted silicon-on-insulator (FD-SOI) n-MOS devices is presented. It has been demonstrated that the LFN origin is due to carrier trapping/detrapping into gate dielectric traps near the interface and the mean noise level in such small area MOSFETs is well approached by the carrier number fluctuations model in all measurement conditions. The impact of gate voltage bias and temperature on the LFN variability, as well as the standard deviation dependence on frequency have been studied for the first time, focusing on their relation to the Random Telegraph Noise (RTN) effect and its characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 117, March 2016, Pages 88-93
Journal: Solid-State Electronics - Volume 117, March 2016, Pages 88-93
نویسندگان
C.G. Theodorou, E.G. Ioannidis, S. Haendler, E. Josse, C.A. Dimitriadis, G. Ghibaudo,