کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150810 | 1462216 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Assessment of 28Â nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work provides a detailed study of 28Â nm fully-depleted silicon-on-insulator (FD-SOI) planar ultra-thin body and BOX (UTBB) MOSFETs for high frequency applications. All parasitic elements such as the parasitic gate and source/drain series resistances, total capacitances are extracted and their effects on RF performance are analyzed and compared with previous work on similar devices. Two main RF figures of merit (FoM) such as the current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are determined. It is shown that fT of â¼280Â GHz and fmax of â¼250Â GHz are achievable in the shortest devices. Based on the extracted parameters, the validation of the small-signal equivalent circuit used for modeling UTBB MOSFETs is investigated by comparing simulated and measured S-parameters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 117, March 2016, Pages 130-137
Journal: Solid-State Electronics - Volume 117, March 2016, Pages 130-137
نویسندگان
B. Kazemi Esfeh, V. Kilchytska, V. Barral, N. Planes, M. Haond, D. Flandre, J.-P. Raskin,