Design and study of programmable ring oscillator using IDUDGMOSFET

In this paper, a novel RF range programmable ring oscillator is designed using independently driven underlap double gate (IDUDG) MOSFET and its performance is studied. The study also presents the variation in analog parameters of the designed oscillator circuit considering different source/drain (S/D) lateral straggle lengths of the IDUDGMOS device. The primary objective behind the programmable oscillator design is the variation of frequency with number of inverter stages and the back gate voltage of IDUDGMOS. The analog parameters analyzed are, the bandwidth, the Total Harmonic Distortion (THD), the linearity and the power consumption of the circuit. The proposed circuit reduces power loss and presents larger bandwidth than other established oscillator circuit designs. The study also shows that IDUDGMOS with larger S/D straggle length improves bandwidth of the oscillator circuit.