کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7150849 1462217 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-performance logic transistor DC benchmarking toward 7 nm technology-node between III-V and Si tri-gate n-MOSFETs using virtual-source injection velocity model
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
High-performance logic transistor DC benchmarking toward 7 nm technology-node between III-V and Si tri-gate n-MOSFETs using virtual-source injection velocity model
چکیده انگلیسی
Injection velocity (vinj) is a unique figure-of-merit that determines logic transistor ON-current (ION) and switching delay (CV/I). This paper reports on Virtual-Source (VS) based analytical and physical model, which was calibrated by using state-of-the-art experimental data on III-V and Si tri-gate n-MOSFET, aiming to compare High-Performance (HP) logic transistor performance at 7 nm technology-node. We find that a significant increase in the virtual source injection velocity and improvement in the electrostatic integrity are critical, to meet the projected ION/IOFF ratio for the 7 nm technology node.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 116, February 2016, Pages 100-103
نویسندگان
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